Online Curriculum Vitae of Damien Caliste

Curriculum vitae (pdf format)
Thesis (download - 9Mo) « Multi-scale simulations of defects diffusion in Si and SiGe semiconductors » written in French
Communications (see below)
Illustration:

Snapshot of the movement of a Ge atom in a dumbbell interstitial position in silicon crystal. This movement includes an hexagonal interstital position as an on-the-way stable configuration. The evolution of the energy is plotted in the left-bottom box. Download the animation (AVI format - 15Mo).

Online curriculum vitae

Doctor in physics - material sciences

Mail	Institut Nanosciences et Cryogénie SP2M/L_Sim, CEA cedex 9, 38054 GRENOBLE, FRANCE
Tel.	(+33)06.63.61.73.38 (French mobile phone) (+33)04.38.78.01.72 (French office phone)
E-mail	damien D caliste A cea D fr
www	CEA / DSM / DRFMC / SP2M / L_Sim

Permanent position in the L_Sim laboratory in Dr. F. Lançon's team.

December 2005 PhD in physics, speciality in material sciences. Thesis directed by Dr. F. Lançon [Grenoble - France].
October 2002 engineer degree from l'École Centrale (one major scientific and technical French school) [Lyon - France].
September 2002 DEA degree (French equivalent to a master degree) in « condensed matter, surfaces and interfaces » [University of Lyon - France].

2004 scientific matter: DFT (Density Functional Theory) physic school (1 week).
2004 industry matter: patents technics (1 week).
2002 computing matter: Python language (1 week) and OpenMP programming (1 week).

« Sharing electronic structure and crystallographic data with ETSF_IO », D. Caliste, Y. Pouillon, M.J. Verstraete, V. Olevano, X. Gonze, Comp. Phys. Com. 179, 748-758 (2008). [DOI]
« Daubechies wavelets as a basis set for density functional pseudopotential calculations », L. Genovese, A. Neelov, S. Goedecker, T. Deutsch, S.A. Ghasemi, A. Willand, D. Caliste, O. Zilberberg, M. Rayson, A. Bergman et R. Schneider, J. Chem. Phys. 129, 014109 (2008). [ArXiv, AIP]
« Specification of an extensible and portable file format for electronic structure and crystallographic data. », X. Gonze, C.-O. Almbladh, A. Cucca, D. Caliste, C. Freysoldt, M. Marques, V. Olevano, Y. Pouillon et M.J. Verstraete, Comp. Mat. Sc. 43, 1056-1065 (2008). [DOI]
« Germanium diffusion mechanisms in silicon: a first principle study », D. Caliste, P. Pochet, T. Deutsch and F. Lançon, Phys. Rev. B 75, 125203 (2007). [APS]
« Vacancy-assisted diffusion in silicon: a three temperatures model », D. Caliste and P. Pochet, Phys. Rev. Lett. 97, 135901 (2006). [APS]

Oral presentation in Lyon (France) for the meeting of the high-performance computing group (in 2005): « A study of germanium diffusion in silicon : role of point defects ».
Poster presentation in the GdR-DFT 2005 (French working group on DFT).
Oral presentation in the GdR-DFT 2004: « Atomistic simulations in Si and SiGeC, coupling ab initio and Monte Carlo methods ».

Creation and teaching of practicals in physical simulations for students of master level, first year students (8h) et second year students (32h).
Teaching of practicals of point mechanism for first year university students (45h).